power transistors 1 publication date: march 2004 sjd00261bed 2sd2374a silicon npn triple diffusion planar type for power amplification complementary to 2sb1548a features ? high forward current transfer ratio h fe which has satisfactory lin- earity ? low collector-emitter saturation voltage v ce(sat) ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c 1.4 0.2 1.6 0.2 0.8 0.1 0.55 0.15 2.54 0.30 5.08 0.50 123 2.6 0.1 2.9 0.2 4.6 0.2 3.2 0.1 3.0 0.5 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 solder dip unit: mm parameter symbol rating unit collector-base voltage (emitter open) v cbo 80 v collector-emitter voltage (base open) v ceo 80 v emitter-base voltage (collector open) v ebo 6v collector current i c 3a peak collector current i cp 5a collector power t c = 25 cp c 25 w dissipation 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: base 2: collector 3: emitter to-220d-a1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank q p h fe1 70 to 150 120 to 250 parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 30 ma, i b = 080v base-emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v collector-emitter cutoff current (e-b short) i ces v ce = 80 v, v be = 0 200 a collector-emitter cutoff current (base open) i ceo v ce = 60 v, i b = 0 300 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 01ma forward current transfer ratio h fe1 * v ce = 4 v, i c = 1 a 70 250 ? h fe2 v ce = 4 v, i c = 3 a 10 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.375 a 1.2 v transition frequency f t v ce = 10 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a, i b1 = 0.1 a, i b2 = ? 0.1 a 0.5 s storage time t stg v cc = 50 v 2.5 s fall time t f 0.4 s this product complies with the rohs directive (eu 2002/95/ec). maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
2sd2374a 2 sjd00261bed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 160 40 120 80 0 8 16 24 32 40 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)without heat sink (p c =2w) (1) (2) 012 210 48 6 0 6 5 4 3 2 1 collector current i c (a) collector-emitter voltage v ce (v) i b =100ma 10ma 20ma 30ma 40ma 50ma 60ma 70ma 80ma 90ma t c =25?c 0 1.2 0.2 1.0 0.4 0.8 0.6 0 8 6 4 2 base-emitter voltage v be (v) collector current i c (a) v ce =4v t c =25?c 0.001 0.01 0.01 0.1 1 10 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =8 t c =25?c 0.01 0.1 1 10 1 10 10 2 10 3 10 4 forward current transfer ratio h fe collector current i c (a) v ce =4v t c =25?c 0.01 0.1 1 10 0.1 1 10 100 1 000 collector current i c (a) transition frequency f t (mhz) v ce =10v f=10mhz t c =25?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) i cp i c t=10ms t=1ms t=1s 2sd2374 2sd2374a non repetitive pulse t c =25?c 10 ? 2 10 ? 1 1 10 10 2 10 3 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) ta=25?c (2) (1)without heat sink (2)with a 100 80 2mm al heat sink this product complies with the rohs directive (eu 2002/95/ec). maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
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